Product Info.

제품소개

AMB ceramic substrates

주요물성

Item Si3N4 Substrate AIN Substrate
Structure Circuit (Thickness) : TOP Cu (0.3㎜) Cu (0.3㎜)
Ceramic Thickness 0.32㎜ 0.635㎜
Thermal Conductivity 85W/mK 180W/mK
Substrate (Thickness) : BOTTOM Cu (0.3㎜) Cu (0.3㎜)
Mechanical Property Thermal Conductivity W/mK 130 180
Bending Strength MPa 900 550
Warpage 0.01 0.01
Cu Peel Strength N/㎜ 25 20
Surface Roughness(Rz) 3 3
Coefficient expansion 1/K 2.5 x 10-6 4.5 x 10-6
Electrical Property Insulation (AC7kV x 1min.) 10/10 OK 10/10 OK
Dielectric Loss (1MHz) 4 x 10-4 4 x 10-4
Volume Resistivity Ω㎝ > 1014 > 1014
Reliability Thermal Cycle Test (-40℃/15min↔125℃/15min) 3,000cycle 500cycle